IXXK160N65B4
IXXK160N65B4
Артикул:
Описание:
IXXK160N65B4
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.54 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
310 A
Power Dispation
940 W
Описание
Insulated-gate bipolar transistor-IXXK160N65B4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.54 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
310 A
Power Dispation
940 W
Описание
Insulated-gate bipolar transistor-IXXK160N65B4: Биполярный транзистор с изолированным затвором