История:
1.5KE36AHE3_A/C
IXXK200N65B4
IXXK200N65B4
Артикул:
Описание:
IXXK200N65B4
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
370 A
Power Dispation
1150 W
Описание
Insulated-gate bipolar transistor-IXXK200N65B4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
370 A
Power Dispation
1150 W
Описание
Insulated-gate bipolar transistor-IXXK200N65B4: Биполярный транзистор с изолированным затвором

