IXXN110N65B4H1
IXXN110N65B4H1
Артикул:
Описание:
IXXN110N65B4H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
215 A
Power Dispation
750 W
Описание
Insulated-gate bipolar transistor-IXXN110N65B4H1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
215 A
Power Dispation
750 W
Описание
Insulated-gate bipolar transistor-IXXN110N65B4H1: Биполярный транзистор с изолированным затвором