IXXR110N65B4H1
IXXR110N65B4H1
Артикул:
IXXR110N65B4H1
Описание:
IXXR110N65B4H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
455 W
Описание
Insulated-gate bipolar transistor-IXXR110N65B4H1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
455 W
Описание
Insulated-gate bipolar transistor-IXXR110N65B4H1: Биполярный транзистор с изолированным затвором