IXXX200N65B4
IXXX200N65B4
Артикул:
IXXX200N65B4
Описание:
IXXX200N65B4
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
370 A
Power Dispation
1150 W
Описание
Insulated-gate bipolar transistor-IXXX200N65B4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
370 A
Power Dispation
1150 W
Описание
Insulated-gate bipolar transistor-IXXX200N65B4: Биполярный транзистор с изолированным затвором