IXYA50N65C3
IXYA50N65C3
Артикул:
IXYA50N65C3
Описание:
IXYA50N65C3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
130 A
Power Dispation
600 W
Описание
Insulated-gate bipolar transistor-IXYA50N65C3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
130 A
Power Dispation
600 W
Описание
Insulated-gate bipolar transistor-IXYA50N65C3: Биполярный транзистор с изолированным затвором