IXYB82N120C3H1
IXYB82N120C3H1
Артикул:
IXYB82N120C3H1
Описание:
IXYB82N120C3H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
164 A
Power Dispation
1040 W
Описание
Insulated-gate bipolar transistor-IXYB82N120C3H1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
164 A
Power Dispation
1040 W
Описание
Insulated-gate bipolar transistor-IXYB82N120C3H1: Биполярный транзистор с изолированным затвором