IXYH100N65C3
IXYH100N65C3
Артикул:
Описание:
IXYH100N65C3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
200 A
Power Dispation
830 W
Описание
Insulated-gate bipolar transistor-IXYH100N65C3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
200 A
Power Dispation
830 W
Описание
Insulated-gate bipolar transistor-IXYH100N65C3: Биполярный транзистор с изолированным затвором