IXYH24N170C
IXYH24N170C
Артикул:
Описание:
IXYH24N170C
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
3.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
58 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXYH24N170C: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
3.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
58 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXYH24N170C: Биполярный транзистор с изолированным затвором