IXYH24N90C3D1
IXYH24N90C3D1
Артикул:
Описание:
IXYH24N90C3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
44 A
Описание
Insulated-gate bipolar transistor-IXYH24N90C3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
44 A
Описание
Insulated-gate bipolar transistor-IXYH24N90C3D1: Биполярный транзистор с изолированным затвором