IXYH30N120C3
IXYH30N120C3
Артикул:
IXYH30N120C3
Описание:
IXYH30N120C3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.7 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
75 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXYH30N120C3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.7 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
75 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXYH30N120C3: Биполярный транзистор с изолированным затвором