IXYH40N65C3H1
IXYH40N65C3H1
Артикул:
IXYH40N65C3H1
Описание:
IXYH40N65C3H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-IXYH40N65C3H1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-IXYH40N65C3H1: Биполярный транзистор с изолированным затвором