IXYH40N90C3
IXYH40N90C3
Артикул:
IXYH40N90C3
Описание:
IXYH40N90C3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
105 A
Power Dispation
600 W
Описание
Insulated-gate bipolar transistor-IXYH40N90C3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
105 A
Power Dispation
600 W
Описание
Insulated-gate bipolar transistor-IXYH40N90C3: Биполярный транзистор с изолированным затвором