IXYH40N90C3D1
IXYH40N90C3D1
Артикул:
Описание:
IXYH40N90C3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
90 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXYH40N90C3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
90 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXYH40N90C3D1: Биполярный транзистор с изолированным затвором