IXYH50N120C3D1
IXYH50N120C3D1
Артикул:
Описание:
IXYH50N120C3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
4.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
90 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-IXYH50N120C3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
4.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
90 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-IXYH50N120C3D1: Биполярный транзистор с изолированным затвором