IXYH50N65C3H1
IXYH50N65C3H1
Артикул:
IXYH50N65C3H1
Описание:
IXYH50N65C3H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.74 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
130 A
Power Dispation
600 W
Описание
Insulated-gate bipolar transistor-IXYH50N65C3H1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.74 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
130 A
Power Dispation
600 W
Описание
Insulated-gate bipolar transistor-IXYH50N65C3H1: Биполярный транзистор с изолированным затвором