IXYH82N120C3
IXYH82N120C3
Артикул:
Описание:
IXYH82N120C3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
160 A
Power Dispation
1040 W
Описание
Insulated-gate bipolar transistor-IXYH82N120C3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
160 A
Power Dispation
1040 W
Описание
Insulated-gate bipolar transistor-IXYH82N120C3: Биполярный транзистор с изолированным затвором