IXYJ20N120C3D1
IXYJ20N120C3D1
Артикул:
IXYJ20N120C3D1
Описание:
IXYJ20N120C3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
4 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
21 A
Power Dispation
105 W
Описание
Insulated-gate bipolar transistor-IXYJ20N120C3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
4 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
21 A
Power Dispation
105 W
Описание
Insulated-gate bipolar transistor-IXYJ20N120C3D1: Биполярный транзистор с изолированным затвором