История:
ATSAMA5D41A-CU
IXYK120N120C3
IXYK120N120C3
Артикул:
Описание:
IXYK120N120C3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.55 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
240 A
Power Dispation
1500 kW
Описание
Insulated-gate bipolar transistor-IXYK120N120C3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.55 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
240 A
Power Dispation
1500 kW
Описание
Insulated-gate bipolar transistor-IXYK120N120C3: Биполярный транзистор с изолированным затвором

