IXYN100N120C3
IXYN100N120C3
Артикул:
IXYN100N120C3
Описание:
IXYN100N120C3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
152 A
Power Dispation
830 W
Описание
Insulated-gate bipolar transistor-IXYN100N120C3: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
152 A
Power Dispation
830 W
Описание
Insulated-gate bipolar transistor-IXYN100N120C3: Биполярный транзистор с изолированным затвором