История:
S6B-BM-1L.M
IXYN100N120C3H1
IXYN100N120C3H1
Артикул:
IXYN100N120C3H1
Описание:
IXYN100N120C3H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
134 A
Power Dispation
690 W
Описание
Insulated-gate bipolar transistor-IXYN100N120C3H1: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
134 A
Power Dispation
690 W
Описание
Insulated-gate bipolar transistor-IXYN100N120C3H1: Биполярный транзистор с изолированным затвором

