IXYN82N120C3H1
IXYN82N120C3H1
Артикул:
IXYN82N120C3H1
Описание:
IXYN82N120C3H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
105 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXYN82N120C3H1: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
105 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXYN82N120C3H1: Биполярный транзистор с изолированным затвором