IXYP8N90C3D1
IXYP8N90C3D1
Артикул:
IXYP8N90C3D1
Описание:
IXYP8N90C3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.15 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
20 A
Power Dispation
125 W
Описание
Insulated-gate bipolar transistor-IXYP8N90C3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.15 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
20 A
Power Dispation
125 W
Описание
Insulated-gate bipolar transistor-IXYP8N90C3D1: Биполярный транзистор с изолированным затвором