IXYT30N65C3H1HV
IXYT30N65C3H1HV
Артикул:
IXYT30N65C3H1HV
Описание:
IXYT30N65C3H1HV
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
60 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-IXYT30N65C3H1HV: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
60 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-IXYT30N65C3H1HV: Биполярный транзистор с изолированным затвором