IXYX25N250CV1HV
IXYX25N250CV1HV
Артикул:
Описание:
IXYX25N250CV1HV
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
2.5 kV
Collector-Emitter Saturation Voltage
3.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
95 A
Power Dispation
937 W
Описание
Insulated-gate bipolar transistor-IXYX25N250CV1HV: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
2.5 kV
Collector-Emitter Saturation Voltage
3.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
95 A
Power Dispation
937 W
Описание
Insulated-gate bipolar transistor-IXYX25N250CV1HV: Биполярный транзистор с изолированным затвором