NGB8206ANSL3G
NGB8206ANSL3G
Артикул:
NGB8206ANSL3G
Описание:
NGB8206ANSL3G
Характеристики
Manufacturer
Littelfuse
Collector-Emitter Voltage
390 V
Maximum Gate Emitter Voltage
15 V
Continuous Collector Current at 25 C
20 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-NGB8206ANSL3G: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Littelfuse
Collector-Emitter Voltage
390 V
Maximum Gate Emitter Voltage
15 V
Continuous Collector Current at 25 C
20 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-NGB8206ANSL3G: Биполярный транзистор с изолированным затвором