NGB8207ABNT4G
NGB8207ABNT4G
Артикул:
NGB8207ABNT4G
Описание:
NGB8207ABNT4G
Характеристики
Manufacturer
Littelfuse
Collector-Emitter Voltage
365 V
Maximum Gate Emitter Voltage
15 V
Continuous Collector Current at 25 C
20 A
Power Dispation
165 W
Описание
Insulated-gate bipolar transistor-NGB8207ABNT4G: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Littelfuse
Collector-Emitter Voltage
365 V
Maximum Gate Emitter Voltage
15 V
Continuous Collector Current at 25 C
20 A
Power Dispation
165 W
Описание
Insulated-gate bipolar transistor-NGB8207ABNT4G: Биполярный транзистор с изолированным затвором