NGD8201ANT4G
NGD8201ANT4G
Артикул:
Описание:
NGD8201ANT4G
Характеристики
Manufacturer
Littelfuse
Collector-Emitter Voltage
440 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
15 V
Continuous Collector Current at 25 C
20 A
Power Dispation
125 W
Описание
Insulated-gate bipolar transistor-NGD8201ANT4G: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Littelfuse
Collector-Emitter Voltage
440 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
15 V
Continuous Collector Current at 25 C
20 A
Power Dispation
125 W
Описание
Insulated-gate bipolar transistor-NGD8201ANT4G: Биполярный транзистор с изолированным затвором