NGTB03N60R2DT4G
NGTB03N60R2DT4G
Артикул:
Описание:
NGTB03N60R2DT4G
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
9 A
Power Dispation
49 W
Описание
Insulated-gate bipolar transistor-NGTB03N60R2DT4G: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
9 A
Power Dispation
49 W
Описание
Insulated-gate bipolar transistor-NGTB03N60R2DT4G: Биполярный транзистор с изолированным затвором