NGTB10N60R2DT4G
NGTB10N60R2DT4G
Артикул:
NGTB10N60R2DT4G
Описание:
NGTB10N60R2DT4G
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
72 W
Описание
Insulated-gate bipolar transistor-NGTB10N60R2DT4G: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
72 W
Описание
Insulated-gate bipolar transistor-NGTB10N60R2DT4G: Биполярный транзистор с изолированным затвором