NGTB15N60R2FG
NGTB15N60R2FG
Артикул:
NGTB15N60R2FG
Описание:
NGTB15N60R2FG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
24 A
Power Dispation
54 W
Описание
Insulated-gate bipolar transistor-NGTB15N60R2FG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
24 A
Power Dispation
54 W
Описание
Insulated-gate bipolar transistor-NGTB15N60R2FG: Биполярный транзистор с изолированным затвором