NGTB15N60S1EG
NGTB15N60S1EG
Артикул:
NGTB15N60S1EG
Описание:
NGTB15N60S1EG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
47 W
Описание
Insulated-gate bipolar transistor-NGTB15N60S1EG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
47 W
Описание
Insulated-gate bipolar transistor-NGTB15N60S1EG: Биполярный транзистор с изолированным затвором