NGTB20N120IHRWG
NGTB20N120IHRWG
Артикул:
NGTB20N120IHRWG
Описание:
NGTB20N120IHRWG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
384 W
Описание
Insulated-gate bipolar transistor-NGTB20N120IHRWG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
384 W
Описание
Insulated-gate bipolar transistor-NGTB20N120IHRWG: Биполярный транзистор с изолированным затвором