NGTB20N135IHRWG
NGTB20N135IHRWG
Артикул:
Описание:
NGTB20N135IHRWG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1350 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
40 A
Power Dispation
394 W
Описание
Insulated-gate bipolar transistor-NGTB20N135IHRWG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1350 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
40 A
Power Dispation
394 W
Описание
Insulated-gate bipolar transistor-NGTB20N135IHRWG: Биполярный транзистор с изолированным затвором