NGTB20N60L2TF1G
NGTB20N60L2TF1G
Артикул:
Описание:
NGTB20N60L2TF1G
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
64 W
Описание
Insulated-gate bipolar transistor-NGTB20N60L2TF1G: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
64 W
Описание
Insulated-gate bipolar transistor-NGTB20N60L2TF1G: Биполярный транзистор с изолированным затвором