NGTB25N120FL3WG
NGTB25N120FL3WG
Артикул:
NGTB25N120FL3WG
Описание:
NGTB25N120FL3WG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-NGTB25N120FL3WG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-NGTB25N120FL3WG: Биполярный транзистор с изолированным затвором