NGTB30N120FL2WG
NGTB30N120FL2WG
Артикул:
Описание:
NGTB30N120FL2WG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
60 A
Power Dispation
452 W
Описание
Insulated-gate bipolar transistor-NGTB30N120FL2WG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
60 A
Power Dispation
452 W
Описание
Insulated-gate bipolar transistor-NGTB30N120FL2WG: Биполярный транзистор с изолированным затвором