NGTB30N135IHR1WG
NGTB30N135IHR1WG
Артикул:
NGTB30N135IHR1WG
Описание:
NGTB30N135IHR1WG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1.35 kV
Collector-Emitter Saturation Voltage
2.6 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
60 A
Power Dispation
394 W
Описание
Insulated-gate bipolar transistor-NGTB30N135IHR1WG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1.35 kV
Collector-Emitter Saturation Voltage
2.6 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
60 A
Power Dispation
394 W
Описание
Insulated-gate bipolar transistor-NGTB30N135IHR1WG: Биполярный транзистор с изолированным затвором