NGTB30N65IHL2WG
NGTB30N65IHL2WG
Артикул:
Описание:
NGTB30N65IHL2WG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-NGTB30N65IHL2WG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-NGTB30N65IHL2WG: Биполярный транзистор с изолированным затвором