NGTB35N60FL2WG
NGTB35N60FL2WG
Артикул:
NGTB35N60FL2WG
Описание:
NGTB35N60FL2WG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
70 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-NGTB35N60FL2WG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
70 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-NGTB35N60FL2WG: Биполярный транзистор с изолированным затвором