NGTB40N120FL2WAG
NGTB40N120FL2WAG
Артикул:
Описание:
NGTB40N120FL2WAG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
160 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-NGTB40N120FL2WAG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
160 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-NGTB40N120FL2WAG: Биполярный транзистор с изолированным затвором