NGTB40N120S3WG
NGTB40N120S3WG
Артикул:
NGTB40N120S3WG
Описание:
NGTB40N120S3WG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
454 W
Описание
Insulated-gate bipolar transistor-NGTB40N120S3WG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
454 W
Описание
Insulated-gate bipolar transistor-NGTB40N120S3WG: Биполярный транзистор с изолированным затвором