NGTB40N65FL2WG
NGTB40N65FL2WG
Артикул:
NGTB40N65FL2WG
Описание:
NGTB40N65FL2WG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
366 W
Описание
Insulated-gate bipolar transistor-NGTB40N65FL2WG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
366 W
Описание
Insulated-gate bipolar transistor-NGTB40N65FL2WG: Биполярный транзистор с изолированным затвором