NGTB50N120FL2WG
NGTB50N120FL2WG
Артикул:
NGTB50N120FL2WG
Описание:
NGTB50N120FL2WG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
100 A
Power Dispation
535 W
Описание
Insulated-gate bipolar transistor-NGTB50N120FL2WG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
100 A
Power Dispation
535 W
Описание
Insulated-gate bipolar transistor-NGTB50N120FL2WG: Биполярный транзистор с изолированным затвором