NGTB60N65FL2WG
NGTB60N65FL2WG
Артикул:
NGTB60N65FL2WG
Описание:
NGTB60N65FL2WG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.64 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
595 W
Описание
Insulated-gate bipolar transistor-NGTB60N65FL2WG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.64 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
595 W
Описание
Insulated-gate bipolar transistor-NGTB60N65FL2WG: Биполярный транзистор с изолированным затвором