NGTG12N60TF1G
NGTG12N60TF1G
Артикул:
NGTG12N60TF1G
Описание:
NGTG12N60TF1G
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
24 A
Power Dispation
54 W
Описание
Insulated-gate bipolar transistor-NGTG12N60TF1G: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
24 A
Power Dispation
54 W
Описание
Insulated-gate bipolar transistor-NGTG12N60TF1G: Биполярный транзистор с изолированным затвором