NGTG20N60L2TF1G
NGTG20N60L2TF1G
Артикул:
NGTG20N60L2TF1G
Описание:
NGTG20N60L2TF1G
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
64 W
Описание
Insulated-gate bipolar transistor-NGTG20N60L2TF1G: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
64 W
Описание
Insulated-gate bipolar transistor-NGTG20N60L2TF1G: Биполярный транзистор с изолированным затвором