RGC80TSX8RGC11
RGC80TSX8RGC11
Артикул:
Описание:
RGC80TSX8RGC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
1.8 kV
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
535 W
Описание
Insulated-gate bipolar transistor-RGC80TSX8RGC11: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
1.8 kV
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
535 W
Описание
Insulated-gate bipolar transistor-RGC80TSX8RGC11: Биполярный транзистор с изолированным затвором