RGCL60TK60DGC11
RGCL60TK60DGC11
Артикул:
Описание:
RGCL60TK60DGC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
30 A
Power Dispation
54 W
Описание
Insulated-gate bipolar transistor-RGCL60TK60DGC11: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
30 A
Power Dispation
54 W
Описание
Insulated-gate bipolar transistor-RGCL60TK60DGC11: Биполярный транзистор с изолированным затвором