RGCL80TS60DGC11
RGCL80TS60DGC11
Артикул:
RGCL80TS60DGC11
Описание:
RGCL80TS60DGC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
65 A
Power Dispation
148 W
Описание
Insulated-gate bipolar transistor-RGCL80TS60DGC11: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
65 A
Power Dispation
148 W
Описание
Insulated-gate bipolar transistor-RGCL80TS60DGC11: Биполярный транзистор с изолированным затвором